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Ordering number : ENA1155 2SC6113 SANYO Semiconductors DATA SHEET 2SC6113 Applications * NPN Triple Diffused Planar Silicon Transistor For 14, 21 inch TV Power Supply Recommended for use in 14, 21 inch TV power supply. Features * * * * * High breakdown voltage and high reliability. Ultrahigh-speed switching. Wide ASO. Adoption of MBIT process. Attachment workability is good by Mica-less package. Specifications Absolute Maximum Ratings at Ta=25C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg PW300s, duty cycle10% Tc=25C Conditions Ratings 1000 500 7 15 25 3 60 150 --55 to +150 Unit V V V A A W W C C Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for applications outside the standard applications of our customer who is considering such use and/or outside the scope of our intended standard applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 40908KB TI IM TC-00001309 No. A1155-1/4 2SC6113 Electrical Characteristics at Ta=25C Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Output Capacitance Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Emitter-to-Base Breakdown Voltage Collector-to-Emitter Saturation Voltage Turn-ON Time Storage Time Fall Time Symbol ICBO IEBO hFE1 hFE2 fT Cob VCE(sat) VBE(sat) V(BR)CBO V(BR)CEO V(BR)EBO VCEX(sus) ton tstg tf Conditions VCB=500V, IE=0A VEB=5V, IC=0A VCE=5V, IC=1.2A VCE=5V, IC=6A VCE=10V, IC=1.2A VCB=10V, f=1MHz IC=6A, IB=1.2A IC=6A, IB=1.2A IC=1mA, IE=0A IC=5mA, RBE= IE=1mA, IC=0A IC=2.5A, IB1=- B2=2A, L=1mH, clamped -I VCC=200V, 5IB1=--2.5IB2=IC=7A, RL=50 VCC=200V, 5IB1=--2.5IB2=IC=7A, RL=50 VCC=200V, 5IB1=--2.5IB2=IC=7A, RL=50 1000 500 7 500 0.5 3.0 0.3 40 8 18 80 1.0 1.5 MHz pF V V V V V V s s s Ratings min typ max 10 10 80 Unit A A Package Dimensions unit : mm (typ) 7504-001 3.4 Switching Time Test Circuit IB1 OUTPUT IB2 VR RB + 100F 0.8 PW=20s D.C.1% 5.6 3.1 16.0 INPUT RL + 470F VCC=200V 5.0 8.0 50 21.0 22.0 4.0 2.8 2.0 0.7 VBE= --5V 2.1 20.4 0.9 1 2 5.45 3 1 : Base 2 : Collector 3 : Emitter SANYO : TO-3PMLH 5.45 3.5 10 9 IC -- VCE 1000mA 800mA Collector Current, IC -- A 14 IC -- VBE VCE=5V 12 Collector Current, IC -- A 8 7 6 5 4 3 2 500mA 600mA 400mA 300mA 200mA 10 8 100mA 6 4 Ta= 12 25C 0C 0 0.5 2 1 0 0 1 2 3 4 5 6 7 8 IB=0mA 9 10 0 1.0 1.5 2.0 IT13466 Collector-to-Emitter Voltage, VCE -- V IT13465 Base-to-Emitter Voltage, VBE -- V --40C No. A1155-2/4 2SC6113 3 2 100 hFE -- IC VCE=5V 10 7 5 VCE(sat) -- IC IC / IB=5 Ta=120 C Ta=120C Collector-to-Emitter Saturation Voltage, VCE(sat) -- V DC Current Gain, hFE 7 5 3 2 10 7 5 3 2 1.0 0.01 25C 3 2 1.0 7 5 3 2 0.1 7 5 3 2 --40C Ta= -40C --4 C 0 120C 25C 2 3 5 7 0.1 2 3 5 7 1.0 2 C 25 2 3 5 7 0.1 2 3 5 7 1.0 2 3 5 7 10 2 3 0.01 0.01 3 5 7 10 2 3 Collector Current, IC -- A 3 IT13467 5 3 VBE(sat) -- IC Collector Current, IC -- A IT13468 SW Time -- IC tstg IC / IB=5 Base-to-Emitter Saturation Voltage, VBE(sat) -- V Switching Time, SW Time -- s 2 2 VCC=200V IC/IB= 5 IB2/IB1= 2 R Load 1.0 7 5 3 2 1.0 7 5 Ta= --40C 25C 120C 3 0.1 7 5 0.1 tf 2 3 5 7 1.0 2 3 5 7 2 3 2 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 5 7 10 2 3 10 5 3 2 Forward Bias A S O ICP=25A IC=15A P C DC =60W op era tio n 10 Collector Current, IC -- A IT13469 5 3 2 Reverse Bias A S O Tc=25C IB2= --2A L=1mH Collector Current, IC -- A IT13470 <50s 10 0 Collector Current, IC -- A Collector Current, IC -- A 10 7 5 3 2 1.0 7 5 3 2 0.1 7 5 3 2 s 10 7 5 3 2 1.0 7 5 3 1m s m s 0.01 1.0 Tc=25C Single pulse 2 3 5 7 10 2 3 5 7 100 2 3 57 IT13475 2 0.1 10 2 3 5 7 100 2 3 5 Collector-to-Emitter Voltage, VCE -- V 3.5 PC -- Ta Collector-to-Emitter Voltage, VCE -- V 70 7 1000 2 IT13472 PC -- Tc 3.0 60 Collector Dissipation, PC -- W 2.5 Collector Dissipation, PC -- W 50 2.0 No he 40 at sin 1.5 k 30 1.0 20 0.5 0 0 20 40 60 80 100 120 140 160 10 0 0 20 40 60 80 100 120 140 160 Ambient Temperature, Ta -- C IT13476 Case Temperature, Tc -- C IT13477 No. A1155-3/4 2SC6113 SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein. SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of SANYO Semiconductor Co.,Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor Co.,Ltd. product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. Upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's intellectual property rights which has resulted from the use of the technical information and products mentioned above. This catalog provides information as of April, 2008. Specifications and information herein are subject to change without notice. PS No. A1155-4/4 |
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